IRFB4620PbF Datasheet | International Rectifier

PD -96172 IRFB4620Pb F HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic d V/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free TO-220AB IRFB4620Pb F VDSS RDS(on) typ. max. ID 200V 60m: 72.5m: 25A Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 25 18 100 144 0.96 ± 20 54 -55 to + 175 300 10lb in (1.1N m) 113 See Fig. 14, 15, 22a, 22b, Units A W W/°C V V/ns °C c e x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c d f m J A m J Thermal Resistance Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mount) j Parameter Typ. Max. 1.045 62 Units °C/W ij - - - 0.50 - - - .irf. 09/05/08...