Datasheet4U Logo Datasheet4U.com

IRFB4620PbF - HEXFET Power MOSFET

Datasheet Summary

Features

  • ) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.

📥 Download Datasheet

Datasheet preview – IRFB4620PbF

📁 Similar Datasheet

  • IRFB4620 - N-Channel MOSFET (INCHANGE)
  • IRFB4610 - N-Channel MOSFET (INCHANGE)
  • IRFB4615 - N-Channel MOSFET (INCHANGE)
  • IRFB4019 - N-Channel MOSFET (INCHANGE)
  • IRFB4020 - N-Channel MOSFET (INCHANGE)
  • IRFB4110 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFB4110G - N-Channel MOSFET (INCHANGE)
  • IRFB4115 - N-Channel MOSFET (INCHANGE)
  • IRFB4115G - N-Channel MOSFET (INCHANGE)
  • IRFB4127 - N-Channel MOSFET (INCHANGE)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD -96172 IRFB4620PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free TO-220AB IRFB4620PbF D G S VDSS RDS(on) typ. max. ID 200V 60m: 72.
Published: |