IRFB4710
PD- 94080
IRFB4710 IRFS4710 IRFSL4710
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l
VDSS
100V
RDS(on) max
0.014Ω
75A
TO-220AB IRFB4710
D2Pak IRFS4710
TO-262 IRFSL4710
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt
- Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
75 53 300 3.8 200 1.4 ± 20 8.2 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N-...
