IRFB5620PBF
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Key Features
- Key Parameters Optimized for Class-D Audio Amplifier Applications
- Low RDSON for Improved Efficiency
- Low QG and QSW for Better THD and Improved Efficiency
- Low QRR for Better THD and Lower EMI
- 175°C Operating Junction Temperature for Ruggedness
- Can Deliver up to 300W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier G S
- IRFB5620PbF Key Parameters
