IRFB59N10D Description
PD - 93890 SMPS MOSFET IRFB59N10D IRFS59N10D IRFSL59N10D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 100V RDS(on) max 0.025Ω ID 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. 1 4/17/00 IRFB/IRFS/IRFSL59N10D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source...
IRFB59N10D Key Features
- High frequency DC-DC converters VDSS 100V RDS(on) max 0.025Ω ID 59A Benefits
- Low Gate-to-Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB
- Fully Characterized Avalanche Voltage IRFB59N10D and Current D2Pak IRFS59N10D TO-262 IRFSL59N10D