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IRFB7434PBF - Power MOSFET

Key Features

  • vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse) 100 Avalanche Current (A) 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 Fig 14. Typical Avalanche Current vs. Pulsewidth 1.0E-01 EAR , Avalanche Energy (mJ) 600 Notes on Repetitive Avalanche Curves , Figures 14, 15: TOP Single Pulse (For further info, see AN-1005 at www. irf. com) BOTTOM 1.0%.

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Full PDF Text Transcription (Reference)

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Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters l DC/AC Inverters Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96436 StrongIRFET™ IRFB7434PbF HEXFET® Power MOSFET D VDSS 40V RDS(on) typ. 1.25mΩ max. 1.