Datasheet4U Logo Datasheet4U.com

IRFB7545PBF - Power MOSFET

Key Features

  • idth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 tav (sec) Fig 15. Avalanche Current vs. Pulse Width 1.0E-02 EAR , Avalanche Energy (mJ) 150 TOP Single Pulse BOTTOM 1.0% Duty Cycle 125 ID = 57A 100 75 50 25 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFB7545 N-Channel MOSFET INCHANGE
IRFB7540 N-Channel MOSFET INCHANGE
IRFB7546 N-Channel MOSFET INCHANGE
IRFB7530 N-Channel MOSFET INCHANGE
IRFB7534 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFB7540PbF Power MOSFET
IRFB7546PBF Power MOSFET
IRFB7530PbF Power MOSFET
IRFB7430PBF Power MOSFET
IRFB7434PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Application  Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC inverters  D G S Benefits  Improved gate, avalanche and dynamic dV/dt ruggedness  Fully characterized capacitance and avalanche SOA  Enhanced body diode dV/dt and dI/dt capability  Lead-free, RoHS compliant G Gate StrongIRFET™ IRFB7545PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 60V 4.9m 5.