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IRFB7546PBF - Power MOSFET

Key Features

  • x Zthjc + Tc 0.01 0.1 Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 10 Avalanche Current (A) EAR , Avalanche Energy (mJ) 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 15. Avalanche Current vs. Pulse Width 120 TOP Single Pul.

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Full PDF Text Transcription (Reference)

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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters StrongIRFET™ IRFB7546PbF HEXFET® Power MOSFET   D VDSS 60V RDS(on) typ. 6.0m G max 7.