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IRFB7740PBF - Power MOSFET

Key Features

  • lanche Current (A) 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. (Single Pulse) 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 tav (sec) 1.0E-02 1.0E-01 Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 160 TOP Single Pulse 140 BOTTOM 1.0% Duty Cycle ID = 52A 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature Notes on Repetitive.

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Full PDF Text Transcription (Reference)

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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters StrongIRFET™ IRFB7740PbF HEXFET® Power MOSFET   D VDSS 75V RDS(on) typ. 6.0m G max 7.