Datasheet Details
| Part number | IRFB9N30APBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 124.85 KB |
| Description | POWER MOSFET |
| Datasheet | IRFB9N30APBF-InternationalRectifier.pdf |
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Overview: l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple Drive Requirements l Lead-Free PD- 95350 IRFB9N30APbF HEXFET® Power MOSFET D VDSS = 300V RDS(on) = 0.45Ω G ID = 9.
| Part number | IRFB9N30APBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 124.85 KB |
| Description | POWER MOSFET |
| Datasheet | IRFB9N30APBF-InternationalRectifier.pdf |
|
|
|
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at lower dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
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