IRFB9N30APBF Description
Third Generation HEXFETs from International Rectifier provide the designer with the best bination of ast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications at lower dissipation levels to approximately 50 watts. The low and low package cost of the TO-220 contribute to its wide acceptance throughout the...
IRFB9N30APBF Key Features
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paraleing
- Dynamic dv/dt Rated
- Simple Drive Requirements