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IRFC240 - HEXFET Power MOSFET

Datasheet Summary

Description

Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 200V Min.

0.180Ω Max.

2.3V Min., 4.0V Max.

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Datasheet preview – IRFC240

Datasheet Details

Part number IRFC240
Manufacturer International Rectifier
File Size 53.98 KB
Description HEXFET Power MOSFET
Datasheet download datasheet IRFC240 Datasheet
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www.DataSheet4U.com PD- 91873 IRFC240 HEXFET® Power MOSFET Die in Wafer Form D G S 200 V Size 4.0 Rds(on)=0.18Ω 5" Wafer Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 200V Min. 0.180Ω Max. 2.3V Min., 4.0V Max. 25µA Max. ± 10µA Max. 125°C Max.
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