Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 200V Min.
0.180Ω Max.
2.3V Min., 4.0V Max.
| Part number | IRFC240 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 53.98 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
 IRFC240 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| IRFC250 | High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | IXYS Corporation |
| IRFC150 | High Voltage Power MOSFET | IXYS Corporation |
| IRFC350 | N-Channel MOSFET | IXYS Corporation |
| IRFC450 | HIGH VOLTAGE POWER MOSFET | IXYS Corporation |
| IRFC9110 | P-Channel Power MOSFET | IRF |
| Part Number | Description |
|---|---|
| IRFC2907B | HEXFET Power MOSFET |
| IRF034 | MOSFET transistor |
| IRF044 | MOSFET transistor |
| IRF054 | MOSFET transistor |
| IRF100B201 | Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
