Datasheet Details
| Part number | IRFD224 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 308.71 KB |
| Description | Power MOSFET |
| Datasheet | IRFD224_InternationalRectifier.pdf |
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Overview: HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1272 IRFD224 VDSS = 250V RDS(on) = 1.1Ω ID = 0.
| Part number | IRFD224 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 308.71 KB |
| Description | Power MOSFET |
| Datasheet | IRFD224_InternationalRectifier.pdf |
|
|
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Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers.
The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.
| Part Number | Description |
|---|---|
| IRFD220 | Power MOSFET |
| IRFD220PBF | Power MOSFET |
| IRFD210 | Power MOSFET |
| IRFD210PBF | HEXFET Power MOSFET |
| IRFD214 | Power MOSFET |
| IRFD010 | Transistor |
| IRFD012 | Transistor |
| IRFD014 | Power MOSFET |
| IRFD024 | Power MOSFET |
| IRFD110 | Power MOSFET |