Datasheet Details
| Part number | IRFD320 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 320.14 KB |
| Description | Power MOSFET |
| Datasheet |
 IRFD320 Datasheet
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| Part number | IRFD320 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 320.14 KB |
| Description | Power MOSFET |
| Datasheet |
IRFD320 Datasheet
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Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers.
The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.
HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1226 IRFD320 VDSS = 400V RDS(on) = 1.8Ω ID = 0.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFD320 | N-Channel Power MOSFET | Intersil Corporation |
 |
IRFD320 | Power MOSFET | Vishay |
 |
IRFD320 | FIELD EFFECT POWER TRANSISTOR | GE |
| Part Number | Description |
|---|---|
| IRFD310 | Power MOSFET |
| IRFD010 | Transistor |
| IRFD012 | Transistor |
| IRFD014 | Power MOSFET |
| IRFD024 | Power MOSFET |
| IRFD110 | Power MOSFET |
| IRFD110PBF | HEXFET Power MOSFET |
| IRFD120 | Power MOSFET |
| IRFD120PBF | HEXFET Power MOSFET |
| IRFD123 | N-Channel Power MOSFET |