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IRFF120 - N-channel Transistors

General Description

The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance.

Key Features

  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Rating.
  • Hermetically Sealed.
  • Simple Drive Requirements.
  • ESD Rating: Class 1B per MIL-STD-750, Method 1020 They are well suited for.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFF110 HEXFET TRANSISTORS
IRFF130 HEXFET TRANSISTORS
IRFF024 N-CHANNEL
IRFF210 TRANSISTORS
IRFF220 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS IRFF120 100V RDS(on) ID 0.30 6.0A PD-90426E IRFF120 JANTX2N6788 JANTXV2N6788 100V, N-CHANNEL REF: MIL-PRF-19500/555 Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.