IRFG5210 Description
The efficient geometry design achieves very low on-state resistance bined with high transconductance.
IRFG5210 is Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY manufactured by International Rectifier.
| Part Number | Description |
|---|---|
| IRFG5110 | Combination 2N-2P-CHANNEL |
| IRFG110 | POWER MOSFET |
| IRFG6110 | POWER MOSFET THRU-HOLE |
| IRFG9110 | POWER MOSFET |
| IRF034 | MOSFET transistor |
The efficient geometry design achieves very low on-state resistance bined with high transconductance.