IRFG5210 Overview
The efficient geometry design achieves very low on-state resistance bined with high transconductance.
Combination 2n-2p-channel Hexfet MOSFET Technology
| Part number | IRFG5210 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 217.24 KB |
| Description | Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY |
| Datasheet | IRFG5210_InternationalRectifier.pdf |
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The efficient geometry design achieves very low on-state resistance bined with high transconductance.
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRFG5110 | Combination 2N-2P-CHANNEL |
| IRFG110 | POWER MOSFET |
| IRFG6110 | POWER MOSFET THRU-HOLE |
| IRFG9110 | POWER MOSFET |
| IRF034 | MOSFET transistor |
| IRF044 | MOSFET transistor |
| IRF054 | MOSFET transistor |
| IRF100B201 | Power MOSFET |
| IRF100B202 | Power MOSFET |
| IRF100S201 | Power MOSFET |