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IRFH8311PbF
VDS Vgs
max
30 ± 20 2.1 3.2 30 80
V V mΩ nC A
HEXFET® Power MOSFET
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = 25°C)
i
PQFN 5X6 mm
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features Low Thermal Resistance to PCB (< 1.3°C/W) Low Profile (<1.