Datasheet Summary
VDS Vgs max RDS(on) max
(@VGS = 10V)
Qg typ
(@Tc(Bottom) = 25°C)
100 ± 20 195
4.2 h3.4
V V mΩ nC
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D DD D 8 765
1 234 S GS G
HEXFET® Power MOSFET
SG G S
PQFN Dual 3.3X3.3 mm
Applications
- DC-DC Primary Switch
- 48V Battery Monitoring
Features and Benefits
Features
Low RDSon (<195mΩ) Low Thermal Resistance to PCB (< 12°C/W) Low Profile (<1.2mm)
Industry-Standard Pinout patible with Existing Surface Mount Techniques
RoHS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density
⇒ Multi-Vendor patibility
Easier...