Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- 1 D IM E N SION IN G & T O LER AN C IN G PE R A N SI Y1 4.5M , 1982 2 C O N T R OLL IN G D IM EN SION : IN C H . 3.30 (.130) 3.10 (.122) -B 13 .7 0 (.540) 13 .5 0 (.530) C D
A 1.40 (.05 5) 3X 1.05 (.04 2) 2 .5 4 (.100) 2X 0.90 (.035 ) 3X 0.70 (.028 ) 0.25 (.010) M A M B 3X 0.48 (.019 ) 0.44 (.017 )
B
2.85 (.1 12) 2.65 (.1 04)
M IN IM U M C R E EP AG E D IST A N C E B ET W E EN A -B -C -D = 4.80 (.189 )
Part Marking Information
TO-220 Fullpak E X AM PL E PLE : TH IS A NA IR 010 E XAM : IS T.
IRFI1010 Datasheet
