Datasheet Details
| Part number | IRFI1310G |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 361.48 KB |
| Description | Power MOSFET |
| Datasheet | IRFI1310G_InternationalRectifier.pdf |
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Overview: Previous Datasheet Index Next Data Sheet PD - 9.1222 IRFI1310G HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.
| Part number | IRFI1310G |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 361.48 KB |
| Description | Power MOSFET |
| Datasheet | IRFI1310G_InternationalRectifier.pdf |
|
|
|
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in mercial-industrial applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFI1310N | N-Channel MOSFET | INCHANGE |
 |
IRFI1310NPBF | Power MOSFET | Infineon |
| Part Number | Description |
|---|---|
| IRFI1310N | Power MOSFET |
| IRFI1310NPBF | Power MOSFET |
| IRFI1010 | Power MOSFET |
| IRFI1010N | Power MOSFET |
| IRFI1010NPBF | Power MOSFET |
| IRFI064 | N-Channel Power MOSFET |
| IRFI260 | N-Channel Power MOSFET |
| IRFI3205 | Power MOSFET |
| IRFI3205PBF | Power MOSFET |
| IRFI3306GPBF | Power MOSFET |