Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- .54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B 3X 0.48 (.019) 0.44 (.017)
B
2.85 (.112) 2.65 (.104)
M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 Fullpak
E X AE MX PA LM EP: L E TH N AIR 1 0F 1I8 0 40G : IS T HIS IS A IS N F IR W ITH ASS W ITH AE SM SB EL MY BLY CE OD 401 L O TL O CT OD 9E B 1E M
A
IN TE R N A T IO N A L IN T E R N A T IO N A L R E C TIF IE R IR FF 1I8 01 R E C T IF IE R IR 40 0G LOGO 9 2 46 LOG.
IRFI1310N Datasheet
