IRFI4019H-117P Datasheet | International Rectifier

DIGITAL AUDIO MOSFET Features Key Parameters h 150 80 13 4.1 2.5 150 V m: nC nC Ω °C - 97074A Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Lead-Free Package VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max G1 S1/D2 G2 S2 D1 TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Description Gate Drain Source This Digital...