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IRFI4321PBF - Power MOSFET

Features

  • ) dif / dt - (A / µs) Fig. 18 - Typical Recovery Current vs. dif/dt 3200 2800 2400 Fig. 19 - Typical Stored Charge vs. dif/dt QRR - (nC) 2000 1600 1200 800 400 0 IF = 50A VR = 128V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) 6 Fig. 20 - Typical Stored Charge vs. dif/dt www. irf. com IRFI4321PbF D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V.
  • + Circuit Layout Considerations.
  • Low Stray Inductance.
  • Ground Plan.

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PD - 97104 IRFI4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID D 150V 12.
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