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IRFI4410ZGPBF - Power MOSFET

Key Features

  • DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] EAS (AR) = PD (ave).
  • tav Fig 15. Maximum Avalanche Energy vs. Temperature www. irf. com 5 Free Datasheet http://www. Datasheet4U. com IRFI4410ZGPbF 4.5 VGS(th) Gate threshold Voltage (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 ID = 1.0A ID = 1.0mA ID = 250μA ID = 150μA IRR (A) 16 14 12 10 8 6 4 2 0 IF = 17A VR = 85V TJ = 25°C TJ = 125°C 100 200 300 400 500 600 700 100 125 150 175 TJ , Temperature ( °C ) diF /dt (A/μs) Fig 16. Thres.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96372 IRFI4410ZGPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free VDSS RDS(on) typ. max. ID D 100V 7.9m: 9.