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IRFI4510GPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97790 IRFI4510GPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High.

Key Features

  • 3) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] EAS (AR) = PD (ave).
  • tav Fig 15. Maximum Avalanche Energy vs. Temperature www. irf. com 5 Free Datasheet http://www. Datasheet4U. com IRFI4510GPbF 4.0 VGS(th) , Gate threshold Voltage (V) 25 IF = 14A V R = 85V TJ = 25°C TJ = 125°C 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) 20 ID = 100μA ID = 25.

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