IRFIB5N65APBF - SMPS MOSFET

Datasheet Summary

Features

r>.
ISD ≤ 5.2A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, Data and specifications subject to change without notice. IR WORLD.

International Rectifier

📥 Download Datasheet

Datasheet Details

Part number	IRFIB5N65APBF
Manufacturer	International Rectifier
File Size	244.66 KB
Description	SMPS MOSFET
Datasheet	IRFIB5N65APBF Datasheet
Additional preview pages of the IRFIB5N65APBF datasheet.

📁 Similar Datasheet

IRFIB5N65A - N-Channel MOSFET (INCHANGE)
IRFIB5N65A - Power MOSFET (Vishay)
IRFIB41N15D - N-Channel MOSFET (INCHANGE)
IRFIB41N15DPbF - Power MOSFET (Infineon)
IRFIB6N60A - N-Channel MOSFET (INCHANGE)
IRFIB6N60A - Power MOSFET (Vishay)
IRFIB7N50A - Power MOSFET (Vishay)
IRFIB7N50A - N-Channel MOSFET (INCHANGE)
IRFIB7N50L - Power MOSFET (Vishay)
IRFIBC20G - N-Channel MOSFET (INCHANGE)

Other Datasheets by International Rectifier

IRFIB5N65A - Power MOSFET
IRFIB5N65 - Power MOSFET
IRFIB5N50L - MOTOR Control Application
IRFIB5N50LPBF - SMPS MOSFET
IRFIB41N15D - Power MOSFET
IRFIB41N15DPbF - HEXFET Power MOSFET
IRFIB6N60A - Power MOSFET
IRFIB6N60APBF - Power MOSFET

Full PDF Text Transcription

Click to expand full text

SMPS MOSFET PD-94837 IRFIB5N65APbF Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current HEXFET® Power MOSFET VDSS 650V RDS(on) max 0.93Ω ID 5.1A TO-220 Full-Pak GDS www.DataSheet4U.

Published: Jun 5, 2007 |