Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
- 2 - D R AIN 3 - SO U R C E
7 .10 (.280) 6 .70 (.263)
16 .0 0 (.630) 15 .8 0 (.622)
1.15 (.04 5) M IN . 1 2 3
N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D
A 3X 1.40 (.05 5) 1.05 (.04 2) 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) 2 .54 (.100) 2X M A M B 3X 0.48 (.019) 0.44 (.017)
B
2.85 (.112 ) 2.65 (.104 )
M IN IM U M C R E EP AG E D IST A NC E B ET W.
IRFIZ46N Datasheet
