Datasheet Details
| Part number | IRFIZ48N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 109.29 KB |
| Description | Power MOSFET |
| Datasheet | IRFIZ48N_InternationalRectifier.pdf |
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Overview: PD 9.1407 PRELIMINARY IRFIZ48N HEXFET® Power MOSFET D l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated U G VDSS = 55V RDS(on) = 0.
| Part number | IRFIZ48N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 109.29 KB |
| Description | Power MOSFET |
| Datasheet | IRFIZ48N_InternationalRectifier.pdf |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
Compare IRFIZ48N distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFIZ48N | N-Channel MOSFET | INCHANGE |
|
IRFIZ48G | N-Channel MOSFET | INCHANGE |
 |
IRFIZ48G | Power MOSFET | Vishay |
| Part Number | Description |
|---|---|
| IRFIZ48NPBF | Power MOSFET |
| IRFIZ48 | Power MOSFET |
| IRFIZ48 | Power MOSFET |
| IRFIZ48 | Power MOSFET |
| IRFIZ48G | Power MOSFET |
| IRFIZ48V | Power MOSFET |
| IRFIZ48VPbF | Power MOSFET |
| IRFIZ44G | HEXFET POWER MOSFET |
| IRFIZ44GPBF | Power MOSFET |
| IRFIZ44N | Power MOSFET |