Datasheet Details
| Part number | IRFIZ48V |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 93.31 KB |
| Description | Power MOSFET |
| Datasheet |
 IRFIZ48V Datasheet
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General Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
- OTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189) Part Marking Information TO-220 Fullpak E X A M P L E : T H IS IS A N IR F I8 4 0 G W ITH.