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PD- 92003A
HEXFET® Power MOSFET
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IRFL014N
VDSS = 55V RDS(on) = 0.16Ω
Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated
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G S
ID = 1.9A
Description
Fifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.
IRFL014N Datasheet
