Datasheet4U Logo Datasheet4U.com

IRFL110PBF - HEXFET Power MOSFET

General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFL110 Power MOSFET Vishay
IRFL014 Power MOSFET Vishay
IRFL024ZTR 55V N-ChanneI MOSFET UMW
IRFL210 Power MOSFET Vishay
IRFL214 Power MOSFET Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFL110 Power MOSFET
IRFL1006 Power MOSFET
IRFL1006PBF HEXFET Power MOSFET
IRFL014 Power MOSFET
IRFL014N Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95317 IRFL110PbF HEXFET® Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 100V RDS(on) = 0.54Ω G S ID = 1.5A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.