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IRFN140 Datasheet Power MOSFET N-channel

Manufacturer: International Rectifier (now Infineon)

Overview: Previous Datasheet .. Index Next Data Sheet Provisional Data Sheet No. PD-9.1546 HEXFET® POWER MOSFET 100 Volt, 0.077Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance bined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance. IRFN140 N-CHANNEL Product Summary Part Number IRFN140 BVDSS 100V RDS(on) 0.

Key Features

  • s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current Œ Repetitive A.

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