IRFP1405 Datasheet | International Rectifier

- 95810 AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features - - - - - Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V RDS(on) = 5.3mΩ ID = 95A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in...