IRFP31N50L Datasheet | International Rectifier

.. - 94081 SMPS MOSFET Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterrupt Ible Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.15Ω 31A l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low Trr and Soft Diode Recovery TO-247AC l High Performance Optimised Anti-parallel Diode Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torqe, 6-32 or M3 screw Max. 31 20 124 460 3.7 ± 30 19 -55 to + 150 300 10 lbf- in (1.1N- m) Units A W W/°C V V/ns .. °C Diode Characteristics Symbol IS VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units Conditions D - - - - - - 31 MOSFET symbol showing the A G - - - - - - 124 integral reverse S p-n junction diode. - - - - - - 1.5 V TJ = 25°C, IS = 31A, VGS = 0V - - - - 170 250 TJ = 25°C IF = 31A ns - - - 220 330 TJ = 125°C di/dt = 100A/µs - - - - 570 860 n C TJ = 25°C - - - 1.2 1.8 µC TJ = 125°C - - - 7.9 12 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typical SMPS Topologies...