IRFP3306PBF - Power MOSFET

Datasheet Summary

Features

ilure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to ex.

International Rectifier

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Datasheet Details

Part number	IRFP3306PBF
Manufacturer	International Rectifier
File Size	292.32 KB
Description	Power MOSFET
Datasheet	IRFP3306PBF Datasheet
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PD - 97128 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free IRFP3306PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 60V 3.3m: 4.

Published: Jan 30, 2016 |