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IRFP3415 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD - 93962A IRFP3415 HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V G S RDS(on) = 0.

General Description

Fifth Generation Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices.

Key Features

  • ) 2.50 (.089) 1.50 (.059) 4 20.30 (.800) 19.70 (.775) 1 2 3 2X 5.50 (.217) 4.50 (.177) NOTES: 1.

IRFP3415 Distributor