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IRFP4110PBF - HEXFET Power MOSFET

Key Features

  • is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. Tjmax (assumed as 7. ∆T = Allowable rise in junction temperature, not to exceed 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = t av.
  • f ZthJC(D, tav) = Transient th.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97311 IRFP4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 100V 3.7m: 4.