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IRFP4127PbF - Power MOSFET

Key Features

  • IRRM - (A) VGS(th) Gate threshold Voltage (V) IRRM - (A) 3.0 2.0 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature 60 50 40 30 20 IF = 29A 10 VR = 100V TJ = 125°C TJ = 25°C 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) Fig 17. Typical Recovery Current vs. dif/dt 3000 2500 2000 1500 QRR - (nC) 20 IF = 44A VR = 100V 10 TJ = 125°C TJ = 25°C 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) Fig 18. Typic.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Application  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply High Speed Power Switching  Hard Switched and High Frequency Circuits   G D S IRFP4127PbF HEXFET® Power MOSFET VDSS RDS(on) typ.