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IRFP4321PBF - HEXFET Power MOSFET

Key Features

  • e Vs. Temperature 40 Fig. 17 - Typical Recovery Current vs. dif/dt 3200 2800 30 2400 20 QRR - (nC) IF = 50A VR = 128V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 IRRM - (A) 2000 1600 1200 800 400 0 IF = 33A VR = 128V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 10 0 dif / dt - (A / µs) dif / dt - (A / µs) Fig. 18 - Typical Recovery Current vs. dif/dt 3200 2800 2400 Fig. 19 - Typical Stored Charge vs. dif/dt QRR - (nC) 2000 1600 1200 800 400 0 IF.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97106 IRFP4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance www.DataSheet4U.com l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID D 150V 12m: 15.