IRFP4410ZPBF
- 97309A
IRFP4410ZPb F
HEXFET® Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic d V/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free
VDSS R D S (o n ) typ. max.
ID (Silicon Limited)
100V 7.2m: 9.0m:
97A
Gate
TO-247AC S
Drain
Source
Absolute Maxim um Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @T C = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VG S dv/dt TJ TSTG
Gate-to-Source Voltage e Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3...
