IRFP450APBF Description
l Two Transistor Forward l Half Bridge, Full Bridge l PFC Boost Notes through are on page 8 .irf. 1 2/26/04 IRFP450APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRFP450APBF Key Features
- Switch Mode Power Supply ( SMPS )
- Uninterruptable Power Supply
- High speed power switching
- Lead-Free Benefits
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss Specified ( See AN 1001) VDSS 500V Rds(on) max 0.40Ω ID 14A TO-247AC G D S