Datasheet4U Logo Datasheet4U.com

IRFP4668PBF - HEXFET Power MOSFET

Key Features

  • 2b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting TJ , Junction Tempe.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFP4668 N-Channel MOSFET INCHANGE
IRFP460 N-Channel MOSFET Transistor Inchange Semiconductor
IRFP460 Power MOSFET Fairchild Semiconductor
IRFP460 N-Channel Power MOSFET Intersil Corporation
IRFP460 N-Channel Power MOSFET ST Microelectronics

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFP460 Power MOSFET
IRFP460A Power MOSFET
IRFP460APBF Power MOSFET
IRFP460AS Power MOSFET
IRFP460LC Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D VDSS RDS(on) typ. 200V 8.0m: max. 9.