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IRFP7537PBF - Power MOSFET

Key Features

  • ingle Pulse) Avalanche Current (A) 10 EAR , Avalanche Energy (mJ) 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 15. Avalanche Current vs. Pulse Width 300 TOP Single Pulse BOTTOM 1.0% Duty Cycle 250 ID = 100A 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature Notes on Repeti.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters StrongIRFET™ IRFP7537PbF HEXFET® Power MOSFET   D VDSS 60V RDS(on) typ. 2.75m G max 3.