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PD - 9.543C
IRFPG50
HEXFET® Power MOSFET
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10/29/97
IRFPG50
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IRFPG50
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IRFPG50
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
I D , Drain Current (A)
10 100us
1ms 1 10ms
0.1
TC = 25 °C TJ = 150 °C Single Pulse
10 100 1000 10000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFPG50
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IRFPG50
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IRFPG50
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
+
RG • • • • dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W.
IRFPG50 Datasheet
