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IRFPG50PBF - HEXFET Power MOSFET

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PD - 94806 IRFPG50PbF HEXFET® Power MOSFET • Lead-Free www.DataSheet4U.com www.irf.com 1 10/31/03 IRFPG50PbF 2 www.irf.com IRFPG50PbF www.irf.com 3 IRFPG50PbF 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 10us 10 100us 1ms 1 10ms 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFPG50PbF www.irf.com 5 IRFPG50PbF 6 www.irf.com IRFPG50PbF Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T.
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