IRFR1010Z Datasheet | International Rectifier

Features Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l l IRFR1010Z IRFU1010Z HEXFET® Power MOSFET VDSS = 55V RDS(on) = 7.5mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Parameter ID = 42A D-Pak IRFR1010Z Max. 91 65 42 360 140 0.9 ± 20 I-Pak IRFU1010Z Units ID @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) ID @ T C = 100°C Continuous Drain Current, V GS @ 10V ID @ T C = 25°C IDM Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current ™ P D @T C = 25°C Power Dissipation V GS E AS (Tested ) IAR E AR TJ T STG Linear Derating Factor Gate-to-Source Voltage W W/°C V m J A m J E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current d Ù h 110 220 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g °C 300 (1.6mm from case ) 10 lbf in (1.1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance R θJC R θJA R θJA Junction-to-Case y y j Parameter Typ. Max. 1.11 40 110 Units °C/W Junction-to-Ambient (PCB mount) Junction-to-Ambient j ij - - - - - - -...