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PD - 94296A
SMPS MOSFET
Applications High frequency DC-DC converters
IRFR12N25D IRFU12N25D
HEXFET® Power MOSFET
l
VDSS
250V
RDS(on) max
0.26Ω
ID
14A
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
D-Pak IRFR12N25D
I-Pak IRFU12N25D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
14 9.
IRFR12N25D Datasheet
