IRFR2307ZPbF Datasheet | International Rectifier

- 96191B Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRFR2307ZPb F IRFU2307ZPb F HEXFET® Power MOSFET VDSS = 75V G RDS(on) = 16mΩ S ID = 42A D-Pak I-Pak IRFR2307ZPb F IRFU2307ZPb...