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IRFR2405PBF - HEXFET Power MOSFET

Description

Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • PLE: T HIS IS AN IRF R120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-F ree" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRF U120 12 34 DAT E CODE P = DES IGNAT ES LEAD-F REE.

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Full PDF Text Transcription

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PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount (IRFR2405) l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 55V G S RDS(on) = 0.016Ω ID = 56A† Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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