IRFR2607Z Overview
AUTOMOTIVE MOSFET PD - 96892 IRFR2607Z IRFU2607Z Features O Advanced Process Technology O Ultra Low On-Resistance O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating...
