IRFR2607Z Datasheet | International Rectifier

Features O Advanced Process Technology O Ultra Low On-Resistance O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) h Single Pulse Avalanche Energy Tested Value ÙIAR Avalanche Current g EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter j RθJC Junction-to-Case ij RθJA Junction-to-Ambient (PCB mount) j RθJA Junction-to-Ambient .irf. HEXFET® Power MOSFET VDSS = 75V RDS(on) = 22mΩ S ID = 42A D-Pak IRFR2607Z I-Pak IRFU2607Z Max. 45 32 42 180 110 0.72 ± 20 96 96 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) y y10 lbf in (1.1N m) Units W W/°C V m J A m J °C Typ. -...