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IRFR2607Z - AUTOMOTIVE MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Features

  • O Advanced Process Technology O Ultra Low On-Resistance O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax.

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Full PDF Text Transcription

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AUTOMOTIVE MOSFET PD - 96892 IRFR2607Z IRFU2607Z Features O Advanced Process Technology O Ultra Low On-Resistance O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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