IRFR2607ZPbF Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free HEXFET® Power MOSFET VDSS = 75V RDS(on) = 22mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S ID = 42A D-Pak I-Pak IRFR2607ZPb F IRFU2607ZPb F Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 45 32 42 180 110 Units A Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy h EAS (Tested ) Single Pulse Avalanche Energy Tested Value ÙIAR Avalanche Current g EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range 0.72 ± 20 96 96 See Fig.12a, 12b, 15, 16 -55 to + 175 W/°C V m J A m J °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance 300 (1.6mm from case ) y y10 lbf in (1.1N m) Parameter j RθJC ij RθJA j RθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient .irf. Typ. - - -...