Datasheet4U Logo Datasheet4U.com

IRFR2607ZPbF - Power MOSFET

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 22mΩ.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFR2607Z N-Channel MOSFET INCHANGE
IRFR210 Power MOSFET Vishay Siliconix
IRFR210A Power MOSFET Samsung
IRFR210B 200V N-Channel MOSFET Fairchild Semiconductor
IRFR214 Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFR2607Z AUTOMOTIVE MOSFET
IRFR2605 Power MOSFET
IRFR210 Power MOSFET
IRFR210PBF HEXFET POWER MOSFET
IRFR214 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 22mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.