IRFR2905Z Datasheet | International Rectifier

Features - - - - - Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V RDS(on) = 14.5mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRFR2905Z Max. 59 42 42 240 110 I-Pak IRFU2905Z Units Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM ™ PD @TC = 25°C Power Dissipation VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current W W/°C V m J A m J d 0.72 ± 20 Single Pulse Avalanche Energy Tested Value Ù h 55 82 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g °C 300 (1.6mm from case ) 10 lbf in (1.1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθJA RθJA Junction-to-Case y y j Parameter Typ. Max. 1.38 40 110 Units °C/W Junction-to-Ambient (PCB mount) Junction-to-Ambient j ij - - - - - -...