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IRFR2905Z - AUTOMOTIVE MOSFET

Download the IRFR2905Z datasheet PDF (IRFU2905Z included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for automotive mosfet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 14.5mΩ ID = 42A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFU2905Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 95811 AUTOMOTIVE MOSFET IRFR2905Z IRFU2905Z HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 14.5mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRFR2905Z Max.
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